Samsung Flash Memory Project Launches 7 Billion U.S. Dollars in Xi'an

Samsung Flash Memory Project Launches 7 Billion U.S. Dollars in Xi'an

On the 9th, South Korea's Samsung Electronics held a completion ceremony for Samsung (China) Semiconductor Co., Ltd., which had set up a $7 billion investment in the first phase of Xi'an High-tech Zone, and will produce the world's most advanced 10-nanometer NAND flash memory chip. The assembly and test facility that Samsung Electronics will build in Xi'an at the same time is expected to be completed by the end of 2014 to build a complete semiconductor production chain.

After the Samsung project was settled, it has attracted the arrival of a large number of domestic and foreign companies, including American Air Chemicals, Sumitomo Japan, South Korea's Dong Jin Shi Meiken, and China Electronics Microelectronics. It is expected that the project will bring in more than 160 supporting enterprises in succession and will directly or indirectly increase more than 10,000 jobs.

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