A higher density single quartz thin film photodiode ( LED ) array has been studied. The attached epitaxial thin film (epi film) LED is approximately 2μm thin and has been constructed on CMOS IC drivers, and other dissimilar material pedestals are transmitted through intramolecular forces ("Efficient Thin Film Linkage (EFB)" technology) . This episodic thin film LED array provides good enough characteristics to supply LED printheads (small variable emitter power (<±5%) and long life cycle (>1000h)). Manufacture of LED arrays tested in 2D (2D) epitaxial thin films; display of 2D 1200dpi epitaxial thin film LED arrays (a small light range of 10μm x 10μm, and a good array intensity of 21.2μm) To show its characteristics.
The 1200dpi epitaxial thin film LED array of bonded diamond-like carbon (DLC) fine films is tested with high heat flux for the first time. The test results showed that a good link of a small epitaxial thin film (10 μm x 10 μm) in the DLC fine film can be constructed. The LED array is linked to the DLC thin film shape on the silicon pedestal to show higher heat transfer characteristics; the initial evaluation of the LED temperature is recommended to be about 50 ° C or even a very high 20 kA / cm 2 LED current density.
In recent years, the specific attraction of silicon photonics technology has come from the technology of "Beyond Moore". Many studies have been used to develop silicon photonics technology. One of the keys to silicon photonics technology is the integration of optical and silicon devices. Integrated optical devices and silicon devices are studied by a number of methods, such as the use of silicon light-emitting devices, compound semiconductors grown in silicon, and wafer bonding. These technologies are all for device integration, and the thin film connection of semiconductors seems to attract a material device that is particularly integrated.
So far, the pioneering work of semiconductor thin film bonding has been studied in many research institutes to join semiconductor thin films to be integrated into different raw material devices. However, products that have not been applied to very successful products have been linked by thin film of semiconductor. Difficult to control the thin film of semiconductor so that there is no flaw, especially in the wafer layer, seems to be a big reason why some laboratories try to use semiconductor thin film to link to the device product. The construction of highly reliable link thin film devices has become an urgent issue.
Semiconductor thin film bonding has one major advantage that will provide more variable choices to integrate device material combinations over compound semiconductors grown into silicon. Unmatched material properties and device process limitations The use of compound semiconductors in the integration of silicon into dissimilar raw material devices. It will be possible to integrate the device, which can be manufactured separately in the best manufacturing process, when a thin film connection of semiconductors is applied. This will also lead to high performance and highly reliable integrated devices. Another advantage is that it is bonded using a thin film of semiconductor, which is a planar line structure that is photolithographically shaped to connect to an integrated device. The thin metal film line can be shaped to cover the thin film device of the edge region. Its wire structure will result in more compression and integration of high-density devices, using die-links, wire links, and links to flipped chips compared to surface-mount fixed structures. The flat line structure excludes large connection pads. This will result in reduced device size and increased integration density of the device.
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