Cree Introduces Packaged 1700V Silicon Carbide Schottky Diode

CREE Inc. (Nasdaq: CREE), a market leader in silicon carbide (SiC) power devices, announced a new series of packaged diodes. With the current silicon carbide Schottky diode technology, this series of diodes provides the highest blocking voltage in the industry. Cree 1700V Z-Rec? Schottky diodes fundamentally eliminate the reverse recovery losses present in silicon PiN diode replacements, enabling systems to achieve ultra-high efficiency with smaller, lighter and improved overall reliability. The new package product released this time adopts 1700V Z-Rec technology, further improves the performance of discrete device design low-power applications and saves system cost.

Cengiz Balkas, Cree's vice president and general manager of power and radio frequency (RF), said: “The Cree 1700V silicon carbide Schottky diode is ideal for high-efficiency power electronic systems. It has the proven Cree Z-Rec silicon carbide Shaw. All the advantages of the special base diode - including zero reverse recovery losses, temperature-independent switches, and operation at higher frequencies.

The 1700V bare chip has been provided to customers who have independently designed custom power modules. The new TO-247-2 package enables customers to take full advantage of the low power 1700V design of silicon carbide, offering greater design flexibility at the current level of choice, and accelerating time-to-market.

Balkas further pointed out: "The 1700V silicon carbide Schottky diodes provide many advantages for design engineers in high voltage power applications. Silicon carbide diodes enable maximum power efficiency and better electromagnetic interference (EMI) performance. Improvements in switching losses can be achieved. Increasing the system frequency to reduce the size of the electromagnetic and capacitive devices, and the overall size, weight, and cost of the system will be significantly reduced.In addition, the 1700V SiC diode eliminates the need to superimpose multiple low-voltage silicon diodes. Can reduce the number of devices, improve thermal performance and reliability.

The Cree C3Dxx170H new silicon carbide diodes are rated at 10A/1700V and 25A/1700V, respectively, and are packaged in the industry-standard TO-247-2 package. The operating junction temperature is -55°C to +175°C.

About CREE

Cree was established in 1987. It is a US listed company (Nasdaq: CREE, 1993). It is famous for LED epitaxy, chip, packaging, LED lighting solutions, compound semiconductor materials, power devices and radio frequency. Manufacturers and industry leaders. The advantages of Cree LED lighting products are unique materials technology and advanced white light technology such as gallium nitride (GaN) and silicon carbide (SiC), with more than 1,300 U.S. patents and over 2,900 international patents. Nearly 390 Chinese patents (including above-licensed and under-examined patents) make Cree LED products always at the leading level in the world. Cree's lighting-grade high-power LEDs have the advantages of high luminous efficiency, stable color point, and long life. Cree provides customers with complete sets of LED lighting solutions while providing customers with high quality, highly reliable light emitting device products. Cree's silicon carbide metal-oxide-semiconductor field-effect transistor switching device (MOSFET switch) has low on-resistance, stable temperature coefficient, low leakage current, and short switching time, as well as the Creo silicon carbide Schottky power diode. With zero reverse recovery current and other characteristics, Cree's silicon carbide power devices are particularly suitable for power electronic systems requiring high frequency, high efficiency, high power density, and high reliability.