The global leader in power semiconductor and management solutions, International Rectifier (IR), has expanded its Strong IR FET family to include 20V to 30V devices designed for high-performance computing and communications applications. At the heart of this expansion is the IR L6283M20VDirectFET, which features exceptionally low on-resistance (RDS(on)), making it ideal for dynamic ORing and electronic fuse (eFuse) applications.
The IR L6283M is housed in an ultra-thin 30mm² DirectFET package, offering a typical on-resistance of just 500μΩ. This design significantly reduces conduction losses, enabling efficient performance in high-current applications. The device can operate from 3.3V, 5V, or 12V rails, cutting losses by up to 15% compared to best-in-class PQFN devices in similar 20A configurations. This improvement allows designers to reduce the number of components required in high-current systems, enhancing efficiency and reliability.
Pan Dawei, Vice President of Sales for IR Asia Pacific, stated, "The expansion of the Strong IR FET series addresses the growing demand for efficient switching in dynamic ORing and electronic fuse applications. The new IR L6283M delivers industry-leading on-resistance within high-performance packages, achieving power density that is comparable to other leading solutions."
Like other members of the DirectFET family, the IR L6283M provides top-side cooling for optimal electrical and thermal performance, along with a bond-free design that improves long-term reliability. The DirectFET package also complies with RoHS regulations, featuring a completely lead-free bill of materials for extended lifecycle designs. Although the package includes high-lead dies under an exemption allowed by Section 7(a) of the Electronic Hazardous Substances Control Regulations, this exemption will expire in 2016.
Here’s a summary of key specifications:
| Device Number | Voltage (V) | Highest VGS (V) | Package | Current Rating (A) | On Resistance (Typical / Max) |
|---------------|-------------|----------------------------|----------------|--------------------|--------------------------------|
| IRL6283M | 20 | 12 | DirectFETMD | 211 | 0.50/0.75 @ 10V, 0.65/0.87 @ 4.5V, 1.1/1.5 @ 2.5V |
| IRFH8201 | 25 | 20 | PQFN5x6B | 100 | 0.80/0.95 @ 10V, 1.20/1.60 @ 4.5V |
| IRFH8202 | 25 | 20 | PQFN5x6B | 100 | 0.90/1.05 @ 10V, 1.40/1.85 @ 4.5V |
| IRFH8303 | 30 | 20 | PQFN5x6B | 100 | 0.90/1.10 @ 10V, 1.30/1.70 @ 4.5V |
| IRFH8307 | 30 | 20 | PQFN5x6B | 100 | 1.1/1.3 @ 10V, 1.7/2.1 @ 4.5V |
| IRF8301M | 30 | 20 | DirectFETMT | 192 | 1.3/1.5 @ 10V, 1.9/2.4 @ 4.5V |
The Strong IR FET family also offers industry-standard footprint PQFN packages and lead-free, environmentally friendly options that comply with RoHS regulations. These features make the family well-suited for a wide range of power management applications.
The product is currently available for bulk orders, allowing manufacturers to integrate these advanced power solutions into their next-generation designs. Whether you're working on high-performance computing, telecommunications, or industrial power systems, the IR L6283M and other members of the Strong IR FET family provide the efficiency, reliability, and performance needed to meet today's demanding power requirements.
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